ZXMN3A06DN8
TYPICAL CHARACTERISTICS
10
T = 25°C
10V
4V
3V
2.5V
10
T = 150°C
10V
4V
3.5V
3V
2.5V
2V
1
2V
V GS
1
1.5V
0.1
0.01
1.5V
0.1 1 10
V DS Drain-Source Voltage (V)
Output Characteristics
0.1
0.01
1.6
1.4
V GS
1V
0.1 1 10
V DS Drain-Source Voltage (V)
Output Characteristics
V GS = 10V
I D = 1.5A
10
T = 150°C
1.2
R DS(on)
1.0
1
T = 25°C
0.8
V GS(th)
0.1
1
2
V DS = 10V
3
4
0.6
0.4
-50
0
V GS = V DS
I D = 250uA
50
100
150
V GS Gate-Source Voltage (V)
Typical Transfer Characteristics
100
T = 25°C
Tj Junction Temperature (°C)
Normalised Curves v Temperature
100
10
2V
V GS
10
T = 150°C
1
2.5V
3V
T = 25°C
1
0.1
4V
10V
0.01
0.1 1 10
I D Drain Current (A)
On-Resistance v Drain Current
ISSUE 2 - OCTOBER 2002
5
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V SD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
相关PDF资料
ZXMN3A14FTA MOSFET N-CH 30V 3.2A SOT23-3
ZXMN3AM832TA MOSFET N-CHAN DUAL 30V 8MLP
ZXMN3AMCTA MOSFET 2N-CH 30V 2.9A DFN
ZXMN3B01FTA MOSFET N-CHAN 30V 2A SOT23-3
ZXMN3B04N8TC MOSFET N-CHAN 30V 8SOIC
ZXMN3B14FTA MOSFET N-CHAN 30V 3.5A SOT23-3
ZXMN3F30FHTA MOSFET N-CHAN 30V SOT23-3
ZXMN3F31DN8TA MOSFET N-CHAN 30V 8SOIC DUAL
相关代理商/技术参数
ZXMN3A06N8TA 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN3A14F 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23
ZXMN3A14FTA 功能描述:MOSFET N Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN3A14FTA-CUT TAPE 制造商:DIODES 功能描述:ZXMN3A14 Series 30 V 0.065 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3
ZXMN3A14FTC 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3AM832 制造商:ZETEX 制造商全称:ZETEX 功能描述:MPPS Miniature Package Power Solutions DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3AM832(1) 制造商:未知厂家 制造商全称:未知厂家 功能描述:
ZXMN3AM832TA 功能描述:MOSFET Dl 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube